Gate Stress Test

Gate-Capacitance (CV) Measurement

  • HF gate-capacitance measurement (10kHz, 100kHz, 1MHz)
    • Voltage sweep max. ± 40V

Time Dependant Dielectric Breakdown (TDDB)

  • Constant Voltage Stress (CVS)
    • 32 / 128 channel low voltage DAQ
    • Voltage ≤ 100V
    • Current ≥ 50nA
    • Temperature: 30 - 175°C
  • Constant Current Stress (CCS)
    • Single device test
    • Possible down to nA
    • Temperature up to 150°C
Aktualisiert von: Birgit H?ft