Publications
2025
| Structural evolution and nucleation dynamics of RF sputtered Ga2O3 films on Ru(0001): The impact of deposition temperature and Ru surface morphology A. Baunthiyal, M. Schowalter, M. Williams, J.-O. Krisponeit, T. Mehrtens, A. Karg, A. Rosenauer, M. Eickhoff, and J. Falta APL Materials 13, (2025), 041130 DOI: 10.1063/5.0270431 |
| Stabilization of Ce3+ cations via U-Ce charge transfer in mixed oxides: consequences on the thermochemical water splitting to hydrogen C. Morales, R. Tschammer, T. Gouder, YM Choi, D. Anjum, A. Baunthiyal, J.-O. Krisponeit, J. Falta, J.I. Flege, and H. Idriss Journal of Physics: Energy 7 (2), (2025), 025012 DOI: 10.1088/2515-7655/adbad9 |
| High-Temperature Growth of CeOx on Au(111) and Behavior under Reducing and Oxidizing Conditions R. Tschammer, L. Bu?, E. Pozarowska, C. Morales, SD Senanayake, M.J. Prieto, L.C. Tanase, L. de Souza Caldas, A. Tiwari, T. Schmidt, M.A. Nino, M. Foerster, J. Falta, and J.I. Flege J. Phys. Chem. C 129 (7), (2025), 3583-3594 DOI: 10.1021/acs.jpcc.4c8072 |
| The Relationship between Sm alloying and structure sensitivity of ceria(111)-and (100)-oriented nanoislands on Cu(111) E. Pozarowska, L. Pleines, M.J. Prieto, L.C. Tanase, L. de Souza Caldas, A. Tiwari, T. Schmidt, J. Falta, C. Morales, and J.I. Flege Phys. Chem. Chem. Phys., (2025) DOI: 10.1039/d5cp01171j |
| Hexagons on rectanges: Epitaxial graphene on Ru101?0 L. Bu?, G. Zamborlini, C. Sulaiman, M. Ewert, M. Cinchetti, J. Falta, and J.I. Flege Carbon 231 (2025), 119600 DOI: 10.1016/j.carbon.2024.119600 |
| Rise and fall of 1T-TaS2: Epitaxial growth of monolayer TaS2 on Au(111) L. Bu?, C. Sulaiman, R. Sanchez-Barquilla, J. Corocariu, M. Szpytma, T.O. Mentes, A. Locatelli, J. Falta, and J.I. Flege Phys. Rev. Mat. 9, (2025), 074006 DOI: 10.1103/1bxg-yvw2 |
| Transition metal dichalcogenide surfaces as scattering targets in spin-polarization detectors: A case study of MoS2 C. Angrick, A. Henriksen, N. Edossa, A. Reimann, M. Ewert, L. Bu?, J. Falta, J.I. Flege, and M. Donath Phys, Rev. B 112 (2025), 235408 DOI: 10.1103/fln2-pf6n |
| In-situ growth and characterization of 2D TaSe2 on Au(111) C. Sulaiman, L. Bu?, R. Sanchez-Barquilla, J. Falta, and J.I. Flege Deutsche Physikalische Gesellschaft (2025) |
| Growth and oxidation of ultra-thin Pt-Sn layers on Pt(111) by molecular and atomic oxygen N. Braud, L. Bu?, L. Merte, H. Wallander, J.-O. Krisponeit, T. Schmidt, E. Lundgren, J.I. Flege, and J. Falta Ultramicroscopy, 278, (2025), 114243 DOI: 10.1016/j.ultramic.2025.114243 |
2024
| Atomic vs. Sub-atomic layer deposition: impact of growth rate on the optical and structural properties of MoS2 and WS2 C. Tessarek, T. Grieb, F.F. Krause, C. Petersen, A. Karg, A. Hinz, N. Osterloh, C. Habben, F. Figge, J.-O. Krisponeit, T. Schmidt, J. Falta, A. Rosenauer, and M. Eickhoff 2D Materials 11 (2), (2024), 025031 DOI: 10.1088/2053-1583/ad3134 |
| In situ Low-Energy Electron Microscopy of Chemical Waves on a Composite V-oxide Rh(110) Surface B. von Boehn, J.-O. Krisponeit, J. Falta, and R. Imbihl ChemPhysChem 25 (16), (2024), e202400186 DOI: 10.1002/cphc.202400186 |
2023
| Low-energy electron microscopy intensity-voltage data – Factorization, sparse sampling and classification F. Masia, W. Langbein, S. Fischer, J.-O. Krisponeit, and J. Falta Journal of Microscopy 289(2), (2023) DOI: 10.1111/jmi.13155 |
| Oxygen Storage by Tin Oxide Monolayers on Pt3Sn(111) L.R. Merte, N. Braud, L. Bu?, M.K. Bisbo, H.J. Wallander, J.-O. Krisponeit, J.I. Flege, B. Hammer, J. Falta, and E. Lundgren Journal of Physical Chemistry C, 127(6), 2023, 2988-2994 DOI: 10.1021/acs.jpcc.2c09041 |
| Cleaning and tailoring the Pt3Sn(111) surface for surface experiments N. Braud, L. Bu?, E. Lundgren, L.R. Merte, H.J. Wallander, J.-O. Krisponeit, A. Locatelli, T.O. Mentes, M. Jugovac, J.I. Flege, and J. Falta Surface Science, 732, (2023), 122081 DOI: 10.1016/j.susc.2023.122281 |
| Erratum to ?Complementary information on CdSe/ZnSe quantum dot local structure from extended x-ray absorption fine structures and diffraction anomalous fine structuremeasurements“ E. Piskorska-Hommel, V. Hol?, O. Caha, A. Wolska, A. Gust, C. Kruse, H. Kr?ncke, J. Falta, and D. Hommel Journal of Alloys and Compounds, 949, (2023), 169782 DOI: 10.1016/j.jallcom.2023.169782 |
| Unraveling van der Waals epitaxy: A real-time in-situ study of MoSe2 growth on graphene/Ru(0001) L. Bu?, N. Braud, M. Ewert, M. Jugovac, T.O. Mentes, A. Locatelli, J. Falta, and J.I. Flege Ultramicroscopy, 250, (2023), 113749 DOI: 10.1016/j.ultramic.2023.113749 |
| Preparation and stability of the hexagonal phase of samarium oxide on Ru(0001) E. Pozarowska, L. Pleines, , Ewert, M.J. Prieto, L.C. T?nase, L. de Souza Caldas, A. Tiwari, Th. Schmidt, J. Falta, E. Krasovskii, C. Morales, and J.I. Flege Ultramicroscopy, 250, (2023), 113755 DOI: 10.1016/j.ultramic.2023.113755 |
| Dynamic Behavior of Tin at Platinum Surfaces during Calatytic CO Oxidation H.J. Wallander, D. Gajdek, S. Albertin, G. Harlow, N. Braud, L. Bu?, J.-O. Krisponeit, J.I. Flege, J. Falta, E. Lundgren, and L. Merte ACS Catalysis, 13(24), (2023), 16158-16167 DOI: 10.1021/acscatal.3c04657 |
| Growth and characterization of sputter-deposited Ga2O3-based memristive devices A. Baunthiyal, J.-O. Krisponeit, M. Schowalter, T. Mehrtens, A. Karg, A. Rosenauer, M. Eickhoff, and J. Falta Applied Physics Letters, 123(21), (2023), 213504 pubs.aip.org/aip/apl/article/123/21/213504/2922373 DOI: 10.1063/5.0170354 |
| Sputter-deposited ?-Ga2O3 Films With Al top electrodes for resistive random access memory technology A. Baunthiyal, J.-O. Krisponeit, A. Karg, S.M. Mahdian, M. Schowalter, T. Mehrtens, M. Eickhoff, A. Rosenauer, and J. Falta 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), (2023), 536-540 DOI: 10.1109/NMDC57951.2023.10343972 |
2022
| Ordering of copper phthalocyanine films on functionalized Si(111) T. Schmidt, T. Wilkens, and J. Falta Surf. Sci. 725, (2022) DOI: 10.1016/j.susc.2022.122127 |
| Phase separation within Vanadium Oxide Islands under Reaction Conditions: Methanol Oxidation at Vanadium Oxide Films on Rh(111) B. von Boehn, A. Wei?bach, J.-O. Krisponeit, J.I. Flege, J. Falta, L. Gregoratti, M. Amati, P. Zeller, and R. Imbihl Journal of Physical Chemistry C 126(45), (2022) DOI: 10.1021/acs.jpcc.2c04174 |
| Enhanced epitaxial growth of Ga203 using an ultrathin SnO2 layer A. Karg, M. Kracht, P. Vogt, A. Messow, N. Braud, J. Sch?rmann, M. Rohnke, J. Janek, J. Falta, and M. Eickhoff Journal of Applied Physics 132(19), (2022) DOI: 10.1063/5.0127232 |
| Growth Mechanism of Single-Domain Monolayer MoS2 Nanosheets on Au(111) M. Ewert, L. Bu?, J.V. Lauritsen, J. Falta, and J.I. Flege ACS Applied Nano Materials 5(12), (2022) DOI: 10.1021/acsanm.2c03584 |
2021
| Structural Transitions Driving Interface Pulses in Methanol Oxidation on Rh(110) and VOx/Rh(110): A LEEM Study B. von Boehn, J.-O. Krisponeit, J. Falta, and R. Imbihl Journal of Physical Chemistry C, 125, (2021), 22539–22546 DOI: 10.1021/acs.jpcc.1c06106 |
| The Transition From MoS2 Single-Layer to Bilayer Growth on the Au(111) Surface M. Ewert, L. Bu?, N. Braud, A.K. Kundu, P.M. Sheverdyaeva, P. Moras, F. Genuzio, T.O. Mentes, A. Locatelli, J. Falta, and J.I. Flege Frontiers in Physics, 9 (2021), 654845 DOI: 10.3389/fphy.2021.654845 |
2020
| Adsorption of sulfur on Si(111) Th. Schmidt, L. Bu?, M. Ewert, G. Sch?nhoff, T. Wehling, and J. Falta Surf. Sci. 694, (2020), DOI: doi.org/10.1016/j.susc.2019.121561 DOI: 10.1016/j.susc.2019.121561 |
| Massively Strained VO2 Thin Film Growth on RuO2 S. Fischer, J.-O. Krisponeit, M. Foerster, L. Aballe, J. Falta, and J. I. Flege Cryst. Growth Des. 20(4) (2020), 2734-2741, DOI: 10.1021/acs.cgd.0c0012 DOI: 10.1021/acs.cgd.0c00120 |
| Reaction dynamics of metal/oxide catalysts: Methanol oxidation at vanadium oxide films on Rh(111) from UHV to 10^?2 mbar B.von Boehn, Ch. Penschke, X. Li, J. Paier, J. Sauer, J.-O. Krisponeit, J.I. Flege, J. Falta, H. Marchetto, T. Franz, G. Lilienkamp, and R. Imbihl Journal of Catalysis 385, (2020), 255-264, DOI: 10.1016/j.jcat.2020.03.016 |
| Switching friction at a manganite surface using electric fields H. Schmidt, J.-O. Krisponeit, N. Weber, K. Samwer, and C.A. Volkert Phys. Rev. Materials 4(11), (2020), 113610 DOI: 10.1103/PhysRevMaterials.4.113610 |
| The morphology of VO2/TiO2(001): terraces, facets and cracks J.-O. Krisponeit, S. Fischer, S. Esser, V. Moshnyaga, Th. Schmidt, L.F.J. Piper, J.I. Flege, and J. Falta Scientific Reports 10(1), (2020),1-8 DOI: 10.1038/s41598-020-78584-9 |
2019
| Nucleation, morphology, and structure of sub-nm thin ceria islands on Rh(111) J.I. Flege, J. H?cker, J.T. Sadowski, S.D. Senanayake, and J. Falta Surface and Interface Analysis 51(1), (2019), 110-114 DOI: 10.1002/sia.6567 |
| Growth and structure of singly oriented single-layer tungsten disulfide on Au(111) L. Bignardi, D. Lizzit, H. Bana, E. Travaglia, P. Lacovig, Ch. E. Sanders, M. Dendzik, M. Michiardi, M. Bianchi, M. Ewert, L. Bu?, J. Falta, J.I. Flege, A. Baraldi, R. Larciprete, P. Hofmann, and S. Lizzit Phys. Rev. Mat. 3(1), (2019), 014003 DOI: 10.1103/PhysRevMaterials.3.014003 |
| Wafer-Scale Synthesis of Graphene on Sapphire: Toward Fab-Compatible Graphene N. Mishra, S. Forti, F. Fabbri, L. Martini, C. McAleese, B.R. Conran, P.R. Whelan, A. Shivayogimath, B.S. Jessen, L. Bu?, J. Falta, I. Aliaj, S. Roddaro, J.I. Flege, P. B?ggild, K.B.K. Teo, and C. Coletti Small, (2019), DOI: 10.1002/smll.201904960 DOI: 10.1002/smll.201904906 |
| Dynamics of the interaction between ceria and platinum during redox processes P. Luches, G. Gasperi, M. Sauerbrey, S. Valeri, J. Falta, and J.I. Flege Frontiers in Chemistry 7, (2019), DOI: 10.3389/fchem.2019.00057 DOI: 10.3389/fchem.2019.00057 |
| Growth of Epitaxial 3,4,9,10-Perylene Tetracarboxylic Dianhydride on Bi-Terminated Silicon T. Schmidt, C. Ahrens, J.I. Flege, C. Jaye, D.A. Fischer, and J. Falta Journal of Physical Chemistry C 123(12), (2019) DOI:10.1021/acs.jpcc.8b10396 |
| High surface area SiC(O)-based ceramic by pyrolysis of poly (ethylene glycol) methacrylate-modified polycarbosilane S. Kaur, S. Fischer, J. Falta, K. Rezwan, and M. Wilhelm Journal of the American Ceramic Society 102(12), (2019), DOI: 10.1111/jace.16647 |
| Quasicrystals and their Approximants in 2D Ternary Oxides S. F?rster, S. Schenk, E.M. Zollner, O. Krahn, Ch.-T. Chiang, F.O. Schumann, A. Bayat, K.-M. Schindler, M. Trautmann, R. Hammer, K. Meinel, W.A. Adeagbo, W. Hergert, J.I. Flege, J. Falta, M. Ellguth, Ch. Tusche, M. DeBoissieu, M. Muntwiler, T. Greber, and W. Widdra phys. stat. sol. (b), (2019), DOI: 10.1002/pssb.201900624 |
| Layer-by-Layer Resistive Switching: Multistate Functionality due to Electric-Field-Induced Healing of Dead Layers J.-O. Krisponeit, B. Damaschke, V. Moshnyaga, and K. Samwer Phys. Rev. Lett. 122, (2019), 136801 DOI:10.1103/PhysRevLett.122.136801 |
2018
| In situ studies of oxide nucleation, growth, and transformation using slow electrons J. I. Flege and D. C. Grinter Prog. Surf. Sci., in press, available online (2018) DOI: 10.1016/j.progsurf.2018.02.001 |
| Thermal reduction of ceria nanostructures on rhodium(111) and re-oxidation by CO2 A. Schaefer, B. Hagmann, J. H?cker, U. Hejral, J.I. Flege, and J. Gustafson Phys. Chem. Chem. Phys. 20(29), (2018), 19447-19457 DOI: 10.1039/C8CP01505H |
2017
| Cerium oxide epitaxial nanostructures on Pt(111): growth, morphology and structure M. Sauerbrey, G. Gasperi, P. Luches, J. Falta, S. Valeri, and J.I. Flege Top. Catal., 60 (2017) DOI: 10.1007/s11244-016-0716-6 |
| Growth and decay of a two-dimensional oxide quasicrystal: High-temperature in situ microscopy S. F?rster, J.I. Flege, E.M. Zollner, F.O. Schumann, R. Hammer, A. Bayat, K.-M. Schindler, J. Falta, and W. Widdra Ann. Phys. (Berlin), 529, (2017) DOI: 10.1002/andp. 201600250 |
| Growth and structure of ultrathin praseodymium oxide layers on Ruthenium(0001) J. H?cker, J.-O. Krisponeit, J. Cambeis, A. Zakharov, Y. Niu, G. Wei, L. Colombi Ciacchi, J. Falta, A. Schaefer, and J.I. Flege Phys. Chem. Chem. Phys. 19, DOI: 10.1039/C6CP06853G |
| Ga and In adsorption on Si(112): adsorption sites and superstructure M. Speckmann, Th. Schmidt, J. I. Flege, J. H?cker, I. Heidmann, and J. Falta Phys. Rev. B 95, (2017), 125441 DOI: 10.1103/PhysRevB.95.125441 |
| The cubic-to-hexagonal phase transition of cerium oxide particles: dynamics and structure J. H?cker, J.-O. Krisponeit, Th. Schmidt, J. Falta, and J. I. Flege Nanoscale 9, (2017), 9352 DOI: 10.1039/C6NR09760J |
| Nanoscale analysis of oxidation state and surface termination of praseodymium oxide ultrathin films on ruthenium(0001) J. I. Flege, J.-O. Krisponeit, J. H?cker, M. Hoppe, Y. Niu, A. Zakharov, A. Schaefer, E. E. Krasovskii, and J. Falta Ultramicroscopy 183, (2017), 61 DOI:10.1016/j.ultramic.2017.05.007 |
| Exploiting micro-scale structural and chemical observations in real time for understanding chemical conversion: LEEM/PEEM studies over CeOx-Cu(111) T. Duchoň, J. Hackl, J. H?cker, K. Veltruská, V. Matolín, J. Falta, S. Cramm, S. Nem?ák, C. M. Schneider, J. I. Flege, and S. D. Senanayake Ultramicroscopy 183, (2017), 84 DOI: 10.1016/j.ultramic.2017.05.003 |
2016
| Mazes and meso-islands: Impact of Ag preadsorption on Ge growth on Si(111) Th. Schmidt, M. Speckmann, J. I. Flege, K. Müller-Caspary, I. Heidmann, A. Kubelka-Lange, T. O. Mente?, M. ?. Ni?o, A. Locatelli, A. Rosenauer, and J. Falta Phys. Rev. B 94, (2016), 235410 DOI: 10.1103/PhysRevB.94.235410 |
| Carrier collection losses in interface passivated amorphous silicon thin-film solar cells A. Neumüller, S. Bereznev, M. Ewert, O. Volobujeva, O. Sergeev, J. Falta, M. Vehse, and C. Agert Appl. Phys. Lett., 109 (4), (2016), 043903 DOI: 10.1063/1.4959995 |
| Ultrasmooth Ru(0001) Films as Templates for Ceria Nanoarchitectures M. Sauerbrey, J. H?cker, M. Wellbrock, M. Schowalter, J.-O. Krisponeit, K. Müller-Caspary, A. Rosenauer, G. Wei, L. Colombi Ciacchi, J. Falta, and J.I. Flege Crystal Growth & Design 16 (8), (2016), 4216-4224 DOI: 10.1021/acs.cgd.6b00192 |
| Growth and characterization of epitaxially stabilized ceria(001) nanostructures on Ru(0001) J.I. Flege, J. H?cker, B. Kaemena, T.O. Mentes, A. Sala, A. Locatelli, S. Gangopadhyay, J.T. Sadowski, S.D. Senanayake, and J. Falta Nanoscale 8, (2016), 10849-10856 DOI: 10.1039/C6NR02393B |
| In situ growth, structure, and real-time chemical reactivity of well-defined CeOx-Ru(0001) model surfaces D.C. Grinter, S.D. Senanayake, and J.I. Flege* Appl. Catal., B 197, (2016), 286 DOI: 10.1016/j.apcatb.2016.02.043 |
| Isotropic thin PTCDA films on GaN(0001) Ch. Ahrens, J.I. Flege, C. Jaye, D.A. Fischer, Th. Schmidt, and J. Falta J. Phys.: Condens. Matter 28, (2016), 475003 DOI: 10.1088/0953-8984/28/47/475003 |
| Morphology and chemical composition of cobalt germanide islands on Ge(001) M. Ewert, Th. Schmidt, J.I. Flege, I. Heidmann, T. Grzela, W. Klesse, M. Foerster, L. Aballe, T. Schroeder, and J. Falta Nanotechnology, 27(32), (2016), 325705 DOI:10.1088/0957-4484/27/32/325705 |
| Controlling Heteroepitaxy by Oxygen Chemical Potential: Exclusive Growth of (100) Oriented Ceria Nanostructures on Cu(111) J. H?cker, T. Duchoň, K. Veltruská, V. Matolín, J. Falta, S.D. Senanayake, and J.I. Flege J. Phys. Chem. C 2016, 120, 9, 4895–4901, DOI: 10.1021/acs.jpcc.5b11066 (selected for journal cover) |
| Role of RuO2(100) in surface oxidation and CO oxidation catalysis on Ru(0001) J.I. Flege, J. Lachnitt, D. Mazur, P. Sutter, and J. Falta Phys. Chem. Chem. Phys. 18, (2016), 213 DOI: 10.1039/C5CP05807D |
2015
| Unraveling the dynamic nanoscale reducibility (Ce4+ → Ce3+) of CeOx-Ru in hydrogen activation J. H?cker, T.O. Mente?, A. Sala, A. Locatelli, Th. Schmidt, J. Falta, S.D. Senanayake, and J.I. Flege Adv. Mater. Interfaces 2, (2015), 1500314 (featured on journal inside cover) DOI: 10.1002/admi.201500314 |
| Nanoscale origin of mesoscale roughening: real-time tracking and identification of three ruthenium oxide phases in ruthenium oxidation J.I. Flege, B. Herd, J. Goritzka, H. Over, E.E. Krasovskii, and J. Falta ACS Nano 9, (2015), 8468 DOI: 10.1021/acsnano.5b03393 |
| Growth, structure, and stability of the high-index TbOx(112) surface on Cu(111) J. H?cker, W. Cartas, A. Schaefer, M. B?umer, J. Weaver, J. Falta, and J.I. Flege J. Phys. Chem. C 119, (2015), 14175 DOI: 10.1021/acs.jpcc.5b02463 |
| Insights into the gas phase oxidation of Ru(0001) on the mesoscopic scale using molecular oxygen J.C. Goritzka, B. Herd, P.P.T. Krause, J. Falta, J.I. Flege, and H. Over Phys. Chem. Chem. Phys. 17, (2015), 13895 DOI: 10.1039/C4CP06010E |
| Oxidation state analysis of ceria by XPS A. Allahgholi, J.I. Flege, S. Thie?, W. Drube, and J. Falta ChemPhysChem 16 (2015), 1083 DOI: 10.1002/cphc.201402729 |
| Surface resonances in electron reflection from overlayers E.E. Krasovskii, J. H?cker, J. Falta, and J.I. Flege J. Phys.: Condens. Matter 27, (2015), 035501 DOI: 10.1088/0953-8984/27/3/035501 |
| Growth and evolution of nickel germanide nanostructures on Ge(001) T. Grzela, G. Capellini, W. Koczorowski, M.A. Schubert, R. Czajka, N.J. Curson, I. Heidmann, Th. Schmidt, J. Falta, and T. Schr?der Nanotechnology 26, (2015), 385701 DOI: 10.1088/0957-4484/26/38/385701 |
| Oxidation-State Analysis of Ceria by X-ray Photoelectron Spectroscopy A. Allahgholi, J.I. Flege, S. Thie?, W. Drube, and J. Falta ChemPhysChem, 16, (2015), 1083-1091 DOI: 10.1002/cphc.201402729 |
| The electronic structure of homogeneous ferromagnetic (Ga, Mn)N epitaxial films E. Piskorska-Hommel, M.J. Winiarski, G. Kunert, I.N. Demchenko, O.D. Roshchupkina, J. Grenzer, J. Falta, D. Hommel, and V. Hol? Journal of Applied Physics, 117 (6), (2015) DOI: 10.1063/1.4907583 |
2014
| Surface oxidation of GaN(0001): Nitrogen plasma-assisted cleaning for ultrahigh vacuum applications S. Gangopadhyay, Th. Schmidt, C. Kruse, S. Figge, D. Hommel, and J. Falta Journal of Vacuum Science & Technology A, 32 (5), (2014) DOI: 10.1116/1.4886956 |
| Intensity-voltage low-energy electron microscopy for functional materials characterization J.I. Flege and E.E. Krasovskii Physica Status Solidi – Rapid Research Letters, 8 (6), (2014), 463-677 DOI: 10.1002/pssr.201409102 |
| Epitaxial, well-ordered ceria/lanthana high-k gate dielectrics on silicon J.I. Flege, B. Kaemena, Th. Schmidt, and J. Falta Journal of Vacuum Science & Technology B, 32 (3), (2014) DOI: 10.1116/1.4876122 |
| Ultrathin, epitaxial cerium dioxide on silicon J.I. Flege, B. Kaemena, J. H?cker, F. Bertram, J. Wollschl?ger, Th. Schmidt, and J. Falta Applied Physics Letters, 104 (13), (2014) DOI: 10.1063/1.4870585 |
| Influence of a low-temperature capping on the crystalline structure and morphology of InGaN quantum dot structures B. Krause, B. Miljevic, T. Aschenbrenner, E. Piskorska-Hommel, C. Tessarek, M. Barchuk, G. Buth, R.D. Tchana, S. Figge, J. Gutowski, D. H?nschke, J. Kalden, T. Laurus, S. Lazarev, R. Magalhaes-Paniago, K. Sebald, A. Wolska, D. Hommel, J. Falta, V. Holy, and T. Baumbach Journal of Alloys and Compounds, 585, (2014) 585-572 DOI: 10.1016/j.jallcom.2013.09.005 |
2013
| Surface evolution of 4H-SiC(0001) during in-situ surface preparation and its influence on graphene properties J. Hassan, A. Meyer, S. Cakmakyapan, O. Kazar, J.I. Flege, J. Falta, E. Ozbay, and E. Janzén Materials Science Forum, 740-742, (2013) 157-160 DOI: 10.4028/www.scientific.net/MSF.717-720.605 |
| Ytterbium Intercalation of Epitaxial Graphene Grown on Si-Face SiC S. Watcharinyanon, L.I. Johansson, C. Xia, J.I. Flege, A. Meyer, J. Falta, and C. Virojanadara Graphene, 2, (2013) 66-73 DOI: 10.4236/graphene.2013.22010 |
| Origin of chemical contrast in low-energy electron reflectivity of correlated multivalent oxides: The case of ceria J.I. Flege, B. Kaemena, A. Meyer, J. Falta, S.D. Senanayake, J.T. Sadowski, R.D. Eithiraj, and E.E. Krasovskii Physical Review B, 88 (23), (2013) DOI: 10.1103/PhysRevB.88.235428 |
| Al-induced faceting of Si(113) C. Klein, I. Heidmann, T. Nabbefeld, M. Speckmann, Th. Schmidt, Frank-J. Meyer zu Heringsdorf, J. Falta, and M. Horn-von Hoegen Surface Science, 618, (2013) 109-114 DOI:10.1016/j.susc.2013.08.007 |
| Spatial correlation of photo-induced and thermionic electron emission from low work function diamond films N. Neugebohrn, T. Sun, Franz A.M. Koeck, Gary G. Hembree, Robert J. Nemanich, Th. Schmidt, and J. Falta Diamond and Related Materials, 40, (2013) 12-16 DOI: 10.1016/j.diamond.2013.09.009 |
| Forschendes Lernen im Bachelor-Walpflichtfach Festk?rperphysik – Ein Pilotprojekt am Fachbereich Physik/Elektrotechnik Th. Schmidt, K. Sebald, and J. Gutowski in: Forschendes Lernen als Profilmerkmal einer Universit?t, L. Huber and M. Kr?ger (eds.) Universit?tsverlag Webler, Bielefeld, 2013, ISBN 978-3-937026-83-1 Link |
| Growth mode and oxidation state analysis of individual cerium oxide islands on Ru(0001) J.I. Flege, B. Kaemena, S.D. Senanayake, J. H?cker, J.T. Sadowski, and J. Falta Ultramicroscopy, 130, (2013) 87-93 DOI: 10.1016/j.ultramic.2013.04.007 |
| Colloidally prepared platinum nanoparticles deposited on iron oxide studied by XAFS E. Piskorska-Hommel, D. Arndt, T. Wilkens, J. Falta, and M. B?umer 15th International Conference on X-ray Absorption Fine Structure (XAFS15) Journal of Physics, Conference Series, 430, (2013) DOI: 10.1088/1742-6596/430/1/012058 |
| Growth and morphology of Ceria on Ruthenium (0001) B. Kaemena, S.D. Senanayake, A. Meyer, J.T. Sadowski, J. Falta, and J.I. Flege Journal of Physical Chemistry C, 117 (1), (2013) 221-232 DOI: 10.1021/jp3081782 |
2012
| Control of epitaxial graphene thickness on 4H-SiC(0001) and buffer layer removal through hydrogen intercalation J. Hassan, C. Virojanadara, A. Meyer, I.G. Ivanov, J.I. Flege, S. Watcharinyanon, J. Falta, L.I. Johansson, and E. Janzén Materials Science Forum, 717-720, (2012) 605-608 DOI: 10.4028/www.scientific.net/MSF.717-720.605 |
| Nanopattering in CoOx/Cu(111): A new type of surface reconstruction and enhancement of catalytic activity S.D. Senanayake, J.T. Sadowski, and J. Evans Journal of Physical Chemistry Letters, 3 (7), (2012) 829-843 DOI: 10.1021/jz300159p |
| Complementary information in CdSe/ZnSe quantum dot local structure from extended X-ray absorption fine structure and diffraction anomalous fine structure measurements. Piskorska-Hommel, V. Hol?, O. Caha, A. Wolska, A. Gust, C. Kruse, H. Kr?ncke, J. Falta, and D. Hommel Journal of Alloys and Copounds, 523, (2012) 155-160 DOI: 10.1016/j.jallcom.2012.01.133 |
2011
| Silicate-free growth of high-quality ultrathin cerium oxxide films on Si(111) J.I. Flege, B. Kaemena, S. Gevers, F. Bertram, T. Wilkens, D. Bruns, J. B?tjer, Th. Schmidt, J. Wollschl?ger, and J. Falta Phys. Rev. B, 84 (2011) 235418 DOI: 10.1103/PhysRevB.84.235418 |
| Self-limited oxide formation in Ni(111) oxidation J.I. Flege, A. Meyer, J. Falta, and E. E. Krasovskii Phys. Rev. B, 84 (2011) 115441 DOI: 10.1103/PhysRevB.84.115441 |
| In adsorption on Si(112) and its impact on Ge growth M. Speckmann, Th. Schmidt, J.I. Flege, and J. Falta IMB J. Res. Dev., 55 (2011) 11 DOI: 10.1147/JRD.2011.2158763 |
| Cleaning and growth morphology of GaN and InGaN surfaces J. Falta, Th. Schmidt, S. Gangopadhyay, Ch. Schulz, S. Kuhr, N. Berner, J.I. Flege, A. Pretorius, A. Rosenauer, K. Sebald, H. Lohmeyer, J. Gutowski, S. Figge, T. Yamaguchi, and D. Hommel Phys. Stat. Sol. B, 248 (2011) 1800-1809 DOI: 10.1002/pssb.201046574 |
| Complex surface phases of Sb on Si(113): Combining x-ray standing waves and density functional theory M. Siebert, Th. Schmidt, J.I. Flege, and J. Falta in: The x-ray standing wave technique: principles and applications, Series on Synchrotron Radiation Techniques and Applications, Vol. 7, J. Zegenhagen and A. Kazimirov (eds.) World Scientific (Singapore) DOI: 10.1142/9789812779014_0020 |
| Photon stimulated desorption J.I. Flege, Th. Schmidt, A. Hille, J. Falta, and G. Materlik in: The x-ray standing wave technique: principles and applications, Series on Synchrotron Radiation Techniques and Applications, Vol. 7, J. Zegenhagen and A. Kazimirov (eds.) World Scientific (Singapore) DOI: 10.1142/9789812779014_0022 |
| In-situ oxidation of ultrathin silver films on Ni(111) A. Meyer, J. I. Flege, S. D. Senanayake, B. Kaemena, R. E. Rettew, F. M. Alamgir, and J. Falta IBM J. Res. Dev., 55 (2011) 8 DOI: 10.1147/JRD.2011.2157262 |
| Mg and Si dopant incorporation and segregation in GaN Th. Schmidt, M. Siebert, J.I. Flege, S. Figge, S. Gangopadhyay, A. Pretorius, T.-L. Lee, J. Zegenhagen, L. Gregoratti, A. Barinov, A. Rosenauer, D. Hommel, and J. Falta Phys. Stat. Sol. B, 248 (2011) 1810-1821 DOI: 10.1002/pssb.201046531 |
| Ultra-thin high-quality silicon nitride films on Si(111) J. Falta, Th. Schmidt, S. Gangopadhyay, T. Clausen, O. Brunke, J.I. Flege, S. Heun, S. Bernstorff, L. Gregoratti, and M. Kiskinova Europhys. Lett., 94 (2011) 16003 DOI: 10.1209/0295-5075/94/16003 |
| Lost in reciprocal space? Determination of the scattering condition in spot profile analysis low-energy electron diffraction C. Klein, T. Nabbefeld, H. Hattab, D. Meyer, G. Jnawali, M. Kammler, F.J. Meyer zu Heringdorf, A. Golla-Franz, B.H. Müller, Th. Schmidt, M. Henzler, and M. Horn-von Hoegen Rev. Sci. Instr., 82 (2011) 035111 DOI: 10.1063/1.3554305 |
| Cleaning of GaN(-2110) surfaces Ch. Schulz, S. Kuhr, H. Geffers, Th. Schmidt, J.I. Flege, T. Aschenbrenner, D. Hommel, and J. Falta J. Vac. Sci. Technol. A, 29 (2011) 011013 DOI: 10.1116/1.3520117 |
| Interactions of oxygen and ethylene with submonolayer Ag films supported on Ni(111) R.E. Rettew, A. Meyer, S.D. Senanayake, T.-L. Chen, C. Petersburg, J.I. Flege, J. Falta, and F.M. Alamgir Phys. Chem. Chem. Phys., 13 (2011) 11034-11044 DOI: 10.1039/C1CP20357F |
| Role of Palladium in Iron Based Fischer-Tropsch Catalysts Prepared by Flame Spray Pyrolysis M. Minnermann, S. Pokhrel, K. Thiel, R. Henkel, J. Birkenstock, T. Laurus, A. Zargham, J.I. Flege, V. Zielasek, E. Piskorska-Hommel, J. Falta, L. M?dler, and M. B?umer J. Phys. Chem. C, 115 (2011) 1302-1310 DOI: 10.1021/jp106860d |
| Photoemission study of praseodymia in its highest oxidation state: The necessity of in situ plasma treatment A. Schaefer, S. Gevers, V. Zielasek, T. Schroeder, J. Falta, J. Wollschl?ger, and M. B?umer The Journal of Chemical Physics, 134 (2011) 054701-1-054701-7 DOI: 10.1063/1.3516953 |
2010
| Improved epitaxy of ultrathin praseodymia films on chlorine passivated Si(111) reducing silicate interface formation S. Gevers, J.I. Flege, B. Kaemena, D. Bruns, T. Weisem?ller, J. Falta, and J. Wollschl?ger Appl. Phys. Lett., 97 (2010) 242901 DOI: 10.1063/1.3525175 |
| J. Falta and Th. Schmidt in ”Handbook of Nanophysics Functional Nanomaterials” K. D. Sattler, Edt.CRC Press, Boca Raton, Florida, USA (2010) ISBN 978-1-4200-7552-6 |
| Forschung mit Synchrotronstrahlung J. Falta and Th. M?ller, Edts. Vieweg + Teubner Verlag Wiesbaden (2010) ISBN 978-3-519-00357-1 |
| Ge Growth on Partially and Entirely Ag Covered Si(111) Th. Schmidt, M. Speckmann, J. Falta, T.O. Mentes, M. A. Nino, and A. Locatelli e-J. Surf. Sci. Nanotech., Vol. 8 (2010) 221-226 DOI: 10.1380/ejssnt.2010.221 |
| On revealing the vertical structure of nanoparticle films with elemental resolution: A total external reflection X-ray standing waves study A. Zargham, Th. Schmidt, J.I. Flege, M. Sauerbrey, R. Hildebrand, S. R?he, M. B?umer, and J. Falta Nucl. Instr. Meth. Phys. Res. B, 268 (2010) 325-328 DOI: 10.1016/j.nimb.2009.09.029 |
| Ultrathin silver films on Ni(111) A. Meyer, J.I. Flege, R.E. Rettew, S.D. Senanayake, Th. Schmidt, F.M. Alamgir, and J. Falta Phys. Rev. B, 82 (2010) 085424 DOI: 10.1103/PhysRevB.82.085424 |
2009
| Silver: a novel growth catalyst for Ge nanoislands on Si(113) M. Speckmann, Th. Schmidt, A. Locatelli, T.O. Mentes, M.A. Ni?o, and J. Falta Phys. Status Solidi RRL, 3 (2009) 305 DOI: 10.1002/pssr.200903294 |
| Local structure of uncapped and capped InGaN/GaN quantum dots E. Piskorska-Hommel, Th. Schmidt, M. Siebert, T. Yamaguchi, D. Hommel, J. Falta, and J.O. Cross J. Synchrotron Rad., 16 (2009) 494 DOI: 10.1107/S0909049509012345 |
| Growth of praseodymium oxide on Si(111) under oxygen-deficient conditions A. Schaefer, V. Zielasek, Th. Schmidt, A. Sandell, M. Schowalter, O. Seifarth, L.E. Walle, Ch. Schulz, J. Wollschl?ger, T. Schroeder, A. Rosenauer, J. Falta, and M. B?umer Phys. Rev. B, 80 (2009) 045414 DOI: 10.1103/PhysRevB.80.045414 |
| Nanoscale analysis of Ru(0001) oxidation using low-energy and photoemission electron microscopy J.I. Flege and P. Sutter J. Phys.: Condens. Matter, 21 (2009) 314018 DOI: 10.1088/0953-8984/21/31/314018 |
| Temperature dependent low energy electron microscopy study of Ge island growth on bare and Ga terminated Si(112) M. Speckmann, Th. Schmidt, J.I. Flege, J.T. Sadowski, P. Sutter, and J. Falta J. Phys.: Condens. Matter, 21 (2009), 314020 DOI:10.1088/0953-8984/21/31/314020 |
| Atomic structure of the non-polar GaN(2110) surface by cross-sectional scanning tunneling microscopy D. Krüger, S. Kuhr, Th. Schmidt, D. Hommel, and J. Falta phys. stat. sol. RRL 3, 4 (2009) 91 DOI: 10.1002/pssr.200903041 |
| Low-temperature growth of InGaN/GaN nano-islands investigated by grazing-incidence X-ray diffraction Th. Schmidt, J.I. Flege, M. Siebert, S. Figge, T. Yamaguchi, D. Hommel, and J. Falta phys. stat. sol. (c), 6 (2009) S602 DOI: 10.1002/pssc.200880979 |
| From nanoislands to nanowires: Growth of germanium on gallium-terminated silicon surfaces Th. Schmidt, J.I. Flege, M. Speckmann, T. Clausen, S. Gangopadhyay, A. Locatelli, T.O. Mentes, S. Heun, F.Z. Guo, P. Sutter, and J. Falta phys. stat. sol. (a), 206 (2009) 1718 DOI: 10.1002/pssa.200881602 |
| Oxide removal from GaN(0001) Ch. Schulz, Th. Schmidt, J.I. Flege, N. Berner, Ch. Tessarek, D. Hommel, and J. Falta phys. stat. sol. (c), 6 (2009) S305 DOI: 10.1002/pssc.200880845 |
2008
| Epitaxial graphene on ruthenium P. Sutter, J. I. Flege, and E. Sutter Nature Mater., 7 (2008) 406 |
| In situ structural imaging of CO oxidation catalysis on oxidized Rh(111) J. I. Flege and P. Sutter Phys. Rev. B, 78 (2008) 153402 DOI: 10.1103/PhysRevB.78.153402 |
| Atomic structure of chlorinated Si(113) surfaces J.I. Flege, Th. Schmidt, M. Siebert, G. Materlik, and J. Falta Phys. Rev. B, 78 (2008) 085317 DOI: 10.1103/PhysRevB.78.085317 |
| Structural imaging of surface oxidation and oxidation catalysis on Ru(0001) J. I. Flege, J. Hrbek, and P. Sutter Phys. Rev. B, 78 (2008) 165407 DOI: 10.1103/PhysRevB.78.165407 |
| Plasma modification of CoPt3 nanoparticle arrays - a route to catalytic coatings of surfaces B. Gehl, J.I. Flege, V. Aleksandrovic, Th. Schmidt, A. Kornowski, S. Bernstorff, J. Falta, H. Weller, and M. B?umer J. Vac. Sci. Technol. A 26(4) (2008) 908 DOI: 10.1116/1.2936222 |
| Structural and chemical effects of plasma treatment on close-packed colloidal nanoparticle layers B. Gehl, A. Fr?msdorf, V. Aleksandrovic, Th. Schmidt, A. Pretorius, J.I. Flege, S. Bernstorff, A. Rosenauer, J. Falta, H. Weller, and M. B?umer Adv. Funct. Mater.,18 (2008) 2398-2410 DOI: 10.1002/adfm.200800274 |
2007
| InGaN selfassembled quantum dots investigated by X-ray diffraction-anomalous-fine structure technique E. Piskorska, V. Hol?, M. Siebert, H. Renevier, Th. Schmidt, J. Falta, T. Yamaguchi, and D. Hommel AIP Conf. Proc., 893(1) (2007) 79 DOI: 10.1063/1.2729779 |
| Adsorbate induced self-ordering of germanium nanoislands on Si(113) Th. Schmidt, T. Clausen, J.I. Flege, S. Gangopadhyay, A. Locatelli, T.-O. Mentes, F.Z. Guo, S. Heun, and J. Falta New J. Phys., 9 (2007) 392 DOI: 10.1088/1367-2630/9/10/392 |
| Formation and morphology of InGaN nano-islands on GaN(0001) S. Gangopadhyay, Th. Schmidt, S. Einfeldt, T. Yamaguchi, D. Hommel, and J. Falta J. Vac. Sci. Techn. B, 25 (2007) 791-795 DOI: 10.1116/1.2734156 |
| Alignment of Ge nanoislands on Si(111) by Ga-induced substrate self-patterning Th. Schmidt, J.I. Flege, S. Gangopadhyay, T. Clausen, A. Locatelli, S. Heun, and J. Falta Phys. Rev. Lett. 98 (2007) 066104-1; Virt.-J. Nanoscale Sci. Techn. 15 (2007) DOI: 10.1103/PhysRevLett.98.066104 |
2006
| Diffraction anomalous fine structure investigation of InGaN quantum dots E. Piskorska, V. Hol?, M. Siebert, B. Krause, T.H. Metzger, Th. Schmidt, J. Falta, T. Yamaguchi, and D. Hommel phys. stat. sol (c), 3 (2006) 1662-1666 DOI: 10.1002/pssc.200565443 |
| Growth and formation of InGaN and GaN nanostructures studied by STM S. Gangopadhyay, Th. Schmidt, S. Einfeldt, T. Yamaguchi, D. Hommel, and J. Falta e-J. Surf. Sci. Nanotech., 4 (2006) 90-95 DOI: 10.1380/ejssnt.2006.90 |
| A novel approach for the growth of InGaN quantum dots T. Yamaguchi, K. Sebald, H. Lohmeyer, S. Gangopadhyay, J. Falta, J. Gutowski, S. Figge, and D. Hommel phys. stat. sol. (c), 3(11) (2006) 3955-3958 DOI: 10.1002/pssc.200671592 |
| X-ray standing wave investigations of Si dopant incorporation in GaN M. Siebert, Th. Schmidt, J.I. Flege, J. Zegenhagen, T.-L. Lee, S. Figge, D. Hommel, and J. Falta Mater. Res. Soc. Symp. Proc. Vol., 892 (2006) FF03-03.1 DOI: 10.1557/PROC-0892-FF03-03 |
| Surface Morphology and Island Shape of MOVPE Grown InGaN Nano-Island Ensembles Studied by STM S. Gangopadhyay, Th. Schmidt, S. Einfeldt, T. Yamaguchi, D. Hommel, and J. Falta Mater. Res. Soc. Symp. Proc. Vol., 892 (2006) FF32-05.1 DOI: 10.1557/PROC-0892-FF32-05 |
| Two to three dimensional transition of InGaN layer and influences of GaN overgrowth T. Yamaguchi, S. Einfeldt, S. Gangopadhyay, J. Falta, and D. Hommel phys. stat. sol. (c), 3 (2006) 1396-1399 DOI: 10.1002/pssc.200565349 |
| Structural investigations of GaN films with x-ray standing waves M. Siebert, Th. Schmidt, J.I. Flege, S. Einfeldt, S. Figge, D. Hommel, and J. Falta phys. stat. sol. (c), 3(6) (2006) 1729 DOI: 10.1002/pssc.200565440 |
| Growth and morphology of MOVPE grown InGaN/GaN islands S. Gangopadhyay, Th. Schmidt, S. Einfeldt, T. Yamaguchi, D. Hommel, and J. Falta phys. stat. sol. (c), 3(6) (2006) 1557 DOI: 10.1002/pssc.200565438 |
| N-plasma assisted MBE grown GaN on Si(111) S. Gangopadhyay, Th. Schmidt, and J. Falta phys. stat. sol. (c), 243(7) (2006) 1416 DOI: 10.1002/pssb.200565439 |
| Surface segregation of Si and Mg dopants in MOVPE grown GaN films revealed by x-ray photoemission spectro-microscopy Th. Schmidt, M. Siebert, J.I. Flege, S. Gangopadhyay, A. Pretorius, S. Figge, L. Gregoratti, A. Barinov, D. Hommel, and J. Falta phys. stat. sol. (c), 3(6) (2006) 1725 DOI: 10.1002/pssc.200565437 |
| Sb surfactant-mediated epitaxy of Ge on Si(113) studied by AFM, SEM and GIXRD T. Clausen, J.I. Flege, Th. Schmidt, and J. Falta Mater. Res. Soc. Symp. Proc. Vol. 901E (2006) Ra12-06.1 DOI: 10.1557/PROC-0901-Ra12-06 |
| Temperature dependent low energy electron microscopy study of Ge growth on Si(113) T. Clausen, Th. Schmidt, J.I. Flege, A. Locatelli, S. Heun, T.O. Mentes, F. Guo, and J. Falta Appl. Surf. Sci. 252 (2006) 5321-5325 DOI: 10.1016/j.apsusc.2005.12.021 |
| Spectro-microscopy of Si doped GaN films Th. Schmidt, M. Siebert, A. Pretorius, S. Gangopadhyay, S. Figge, J.I. Flege, L. Gregoratti, A. Barinov, D. Hommel, and J. Falta Nucl. Instr. Meth. B, 246 (2006) 79 DOI: https://doi.org/10.1016/j.nimb.2005.12.018 |
| Less strain energy despite fewer misfit dislocations: The impact of ordering Th. Schmidt, R. Kr?ger, J.I. Flege, T. Clausen, J. Falta, A. Janzen, P. Zahl, P. Kury, M. Kammler, and M. Horn-von Hoegen Phys. Rev. Lett. 96 (2006) 066101 DOI: 10.1103/PhysRevLett.96.066101 |
| Grazing-incidence small-angle x-ray scattering investigation of spin-coated CoPt3 nanoparticle films J.I. Flege, Th. Schmidt, V. Aleksandrovic, G. Alexe, T. Clausen, B. Gehl, A. Kornowski, S. Bernstorff, H. Weller, and J. Falta Nucl. Instr. Meth. B 246 (2006) 25 DOI: 10.1016/j.nimb.2005.12.013 |
| Initial stage of silicon nitride nucleation on Si(111) by rf plasma-assisted growth S. Gangopadhyay, Th. Schmidt, and J. Falta e-J. Surf. Sci. Nanotech., 4 (2006) 84 DOI: 10.1380/ejssnt.2006.84 |
2005
| Real-time low-energy electron microscopy study of Ga adsorption and facet array formation on Si(113) T. Clausen, Th. Schmidt, J.I. Flege, J. Falta, A. Locatelli, T.O. Mentes, S.Heun, and F.Guo e-J. Surf. Sci. Nanotech., 3 (2005) 379-383 DOI: 10.1380/ejssnt.2005.379 |
| Self-organized 2D nanopatterns after low-coverage Ga adsorption on Si(111) Th. Schmidt, J.I. Flege, S. Gangopadhyay, T. Clausen, A. Locatelli, S. Heun, and J. Falta New J. Phys., 7 (2005) 193 DOI: 10.1088/1367-2630/7/1/193 |
| Ordering mechanism of stacked CdSe/ZnSSe quantum dots: A combined reciprocal-space and real-space approach Th. Schmidt, E. Roventa, G. Alexe, T. Clausen, J.I. Flege, S. Bernstorff, A. Rosenauer, D. Hommel, and J. Falta Phys. Rev. B, 72 (2005) DOI: 10.1103/PhysRevB.72.195334 |
| Desorption site-specificity and halogen minority sites on Si(111) J.I. Flege, Th. Schmidt, J. B?tjer, M. Cakmak, G. Materlik and J. Falta New J. Phys., 7 (2005) 208 DOI:10.1088/1367-2630/7/1/208 |
| Sb-induced reconstructions on Si(113): Adatoms as the key elements M. Siebert, Th. Schmidt, J.I. Flege, and J. Falta Phys. Rev. B, 72 (2005) 045323 DOI: 10.1103/PhysRevB.72.045323 |
| Surfactant mediated epitaxy of Ge on Si(111): beyond the surface Th. Schmidt, R. Kr?ger, T. Clausen, J. Falta, A. Janzen, M. Kammler. P. Kury, P. Zahl, and M. Horn-von Hoegen Appl. Phys. Lett. 86 (2005) 111910 DOI: 10.1063/1.1882760 |
| CoPt3 nanoparticles adsorbed on SiO2: a GISAXS and SEM study J.I. Flege, Th. Schmidt, G. Alexe, T. Clausen, S. Bernstorff, I. Randjelovic, V. Aleksandrovic, A.Kornowski, H. Weller and J. Falta Mater. Res. Soc. Symp. Proc. Vol. 840 (2005) DOI: 10.1557/PROC-840-Q6.10 |
| XSW measurements of Sb on the Si(113) surface M. Siebert, J.I. Flege, Th. Schmidt and J. Falta Physica B 357 (2005) 115-117 DOI: 10.1016/j.physb.2004.11.037 |
2004
| Small angle x-ray scattering reveals CdSe/ZnSSe quantum dot ordering Th. Schmidt, G. Alexe, D. Hommel, T. Clausen, J. Falta, and S. Bernstorff Elettra Highlights 2004 DOI: 10.1002/pssb.200304237 |
| Interfacial interactions at Au/Si3N4/Si(111) and Ni/Si3N4/Si(111) structures with ultra-thin nitride films L. Aballe, L.Gregoratti, A. Barinov, and M. Kiskinova T. Clausen, S. Gangopadhyay, J. Falta Appl. Phys. Lett. 84 (2004) 5031 DOI: 10.1063/1.1763636 |
| Dry etching characteristics and surface reconstruction of Cl/Si(113) J.I. Flege, Th. Schmidt, G. Materlik, and J. Falta Surf. Sci. 566-568 (2004) 94-99 DOI: 10.1016/j.susc.2004.05.028 |
| Direct investigation of very thin CdSe layers on ZnSe by out-of-plane grazing incidence x-ray diffraction G. Alexe, T. Passow, Th. Schmidt, T. Clausen, J. Falta, H. Heinke and D. Hommel Phys. Stat. Sol. (c), 1 (2004) 702-705 DOI: 10.1002/pssc.200304297 |
| Investigation of CdSe/ZnSSe quantum dot ordering by grazing incidence small angle x-ray scattering Th. Schmidt, T. Clausen, J. Falta, S. Bernstorff, G. Alexe, T. Passow and D. Hommel Phys. Stat. Sol. (b), 241 (2004) 523-526 DOI: 10.1002/pssb.200304237 |
| Correlated stacks of CdSe/ZnSe quantum dots Th. Schmidt, T. Clausen, J. Falta, G. Alexe, T. Passow, D. Hommel, and S. Bernstorff Appl. Phys. Lett. 84 (2004) 4367-4369 Virt. J. Nanoscale Sci. Techn. 9 (2004) DOI: 10.1063/1.1756195 |
| Photon-stimulated Desorption and X-ray Standing Waves J.I. Flege, Th. Schmidt, A. Hille, J. Falta, and G. Materlik Synchrotron Radiation News, 17 (3) (2004) 43-47 DOI: 10.1080/08940880408603094 |
| Influence of substrate domain boundaries on surface reconstructions of Ga/Si(111) S. Gangopadhyay, Th. Schmidt, and J. Falta Surf. Sci., 552 (2004) 63-69 DOI: 10.1016/j.susc.2003.12.038 |
2003
| Spectro-microscopy of ultra-thin SiN films on Si(111) Th. Schmidt, T. Clausen, S. Gangopadhyay, J. Falta, S. Heun, L. Gregoratti, A. Barinov, B. Kaulich, M. Kiskinova Nuclear Instruments and Methods in Physics Research B, 200 (2003) 79 - 84 DOI: 10.1016/S0168-583X(02)01678-6 |
2002
Subsurface interstitials as promoters of 3D growth of Ti on Si(111): An XSW, XPS and AFM investigation |
Determination of the K adsorption site on Fe(110) with XSW |
Low temperature interface structure of CaF2/Si(111) studied by combining x-ray standing waves with component-resolved photoemission |
Origin of x-ray photon stimulated desorption of Cl+ and Cl2+ ions from Cl/Si(111)-(1x1) |
Influence of capping conditions on structural properties of CdSe/ZnSe quantum dot structures |
2001
Characterization of Ge d-doped Si(111) with RBS-channeling |
Segregation enhanced etching of Cd during Zn deposition on CdSe quantum dots |
Grazing incidence structural characterization of InAs quantum dots on GaAs(001) |
Erratum to: X-ray photon stimulated ion desorption revealed by standing waves |
Structural characterization of self-assembled InAs quantum dots grown by MBE |
Lateral distribution of buried self-assembled InAs quantum dots in GaAs |
> 2000
Nondestructive detection of stacking faults for optimization of CdSe/ZnSe quantum-dot structures |
Distribution and shape of self-assembled InAs quantum dots grown on GaAs(001) |
Strain Status of Self-assembled InAs Quantum Dots |
Ordering and Shape of Self-assembled InAs Quantum Dots on GaAs (001) |
Effects of electron irradiation on the structure and morphology of CaF2/Si(111) |
Islands as catalyst for film relaxation in Bi mediated Ge epitaxy on Si(111) |
Initial stage of the Bi surfactant mediated growth of Ge on Si(111): A structural study |
Bi: Perfect surfactant for Ge growth on Si(111)? |
X-ray photon stimulated desorption revealed by standing waves |
Giant magnetoresistance in Fe/Cr superlattices without bulk scattering |
Strain as driving force for interface roughening of d doping layers |
Structural analysis of Fe/Cr superlattices and their components |
High concentration Bi d doping layers on Si(001) |
X-ray characterization of buried d layers |
Strain induced interface roughness of Si1-xCx d layers |
K adsorption of Fe(100) studied by x-ray standing waves |
Ge d layers in Si(100) characterized by x-ray reflectivity, grazing incidence diffraction and standing wave measurements |
Stress reduction and interface quality of Sb d layers on Si(001) |
Surfactant adsorption site and growth mechanism of Ge on Ga terminated Si(111) |
Towards perfect Ge d layers on Si(001) |
X-ray interface characterization of Ge d layers on Si(001) |
Domain wall structure of Si(111)(v3xv3)R30°-Au |
Ge d-layers on Si(111) and Si(001) by MBE and SPE |
Lattice position of Fe in Fe-doped LiNbO3 |
Interface roughening of Ge d layers on Si(111) |
Surfactants in Si(111) homoepitaxy |
Kossel diffraction in nearly perfect crystals: X-ray standing waves in reverse |
Growth modes of Ge on GaAs(001) |
LEEM and MEIS studies of Ge growth on GaAs(001) |
Ga-As intermixing in GaAs(001) reconstructions |
Frustrated dimers at the CoSi2Si(001) interface |
Surfactant coverage and epitaxy of Ge on Ga terminated Si(111) |
Reply to: Comment on Structure and composition of GaAs(001) Surfaces |
MEIS investigations of Si and Ge epitaxy on GaAs(001)-c(2x8) |
Structure and composition of GaAs(001) Surfaces |
Effect of an interfacial Ti layer on the formation of CoSi2 on Si |
Ring clusters in transition metal surface structures |
Studies of crystalline defects during the early stages of growth of Si on Si(100) at low temperatures by spot profile analysis of LEED (SPA-LEED) |
Low-energy electron-diffraction profile analysis of reaction-induced substrate changes on Pt(110) during catalytic CO oxidation |
Formation of Turing structures in catalytic surface reactions: the facetting of Pt(110) in CO+O2 |
The initial stages of epitaxial growth of silicon on Si(100) 2x1 |
Spatial pattern formation in a catalytic surface reaction: the facetting of Pt(110) in CO+O2 |
Electron diffraction at stepped homogeneous and inhomogeneous surfaces |
The initial stages of growth of silicon on Si(111) by spot profile analysis of low energy electron diffraction |
SPA LEED Studies of defects in thin epitaxial NiSi2 layers on Si(111) |

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